HGI110N08AL Specs and Replacement
Type Designator: HGI110N08AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 205 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: TO-251
HGI110N08AL substitution
HGI110N08AL Specs
hgd110n08al hgi110n08al.pdf
HGD110N08AL , HGI110N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 9.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 13.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 50 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in... See More ⇒
hgd110n08a hgi110n08a.pdf
HGD110N08A , HGI110N08A P-1 80V N-Ch Power MOSFET Feature High Speed Power Switching 80 V VDS Enhanced Body diode dv/dt capability 9.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 51 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit... See More ⇒
Detailed specifications: HGI098N10AL , HGD098N10SL , HGI098N10SL , HGD100N12S , HGD100N12SL , HGD110N08A , HGI110N08A , HGD110N08AL , IRF740 , HGD110N10SL , HGI110N10SL , HGD120N06SL , HGI120N06SL , HGD155N15S , HGD170N10A , HGI170N10A , HGD170N10AL .
Keywords - HGI110N08AL MOSFET specs
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