All MOSFET. HGD155N15S Datasheet

 

HGD155N15S Datasheet and Replacement


   Type Designator: HGD155N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 61 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-252
 

 HGD155N15S substitution

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HGD155N15S Datasheet (PDF)

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HGD155N15S

P-1HGD155N15S150V N-Ch Power MOSFETFeature High Speed Power Smooth Switching150 VVDS Enhanced Body diode dv/dt capability13RDS(on),typ mW Enhanced Avalanche Ruggedness61 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDrain

Datasheet: HGD110N08A , HGI110N08A , HGD110N08AL , HGI110N08AL , HGD110N10SL , HGI110N10SL , HGD120N06SL , HGI120N06SL , 50N06 , HGD170N10A , HGI170N10A , HGD170N10AL , HGI170N10AL , HGD190N15SL , HGD195N15S , HGD195N15SL , HGD1K2N20ML .

History: RU35122S

Keywords - HGD155N15S MOSFET datasheet

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