HGD155N15S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD155N15S
Marking Code: GD155N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 61 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 183 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-252
HGD155N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD155N15S Datasheet (PDF)
hgd155n15s.pdf
P-1HGD155N15S150V N-Ch Power MOSFETFeature High Speed Power Smooth Switching150 VVDS Enhanced Body diode dv/dt capability13RDS(on),typ mW Enhanced Avalanche Ruggedness61 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDrain
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .