HGI1K2N20ML MOSFET. Datasheet pdf. Equivalent
Type Designator: HGI1K2N20ML
Marking Code: GI1K2N20ML
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 17.6 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 9.8 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 22 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-251
HGI1K2N20ML Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGI1K2N20ML Datasheet (PDF)
..1. Size:946K cn hunteck
hgd1k2n20ml hgi1k2n20ml.pdf
hgd1k2n20ml hgi1k2n20ml.pdf
HGD1K2N20ML , HGI1K2N20ML P-1200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching, Logic Level95RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability106RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness18 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchi
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