HGD230N10A Datasheet. Specs and Replacement
Type Designator: HGD230N10A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 107 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO-252
HGD230N10A substitution
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HGD230N10A datasheet
hgd230n10a.pdf
P-1 HGD230N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 22 RDS(on),typ mW Enhanced Body diode dv/dt capability 31 A ID (Slicon Limited) Enhanced Avalanche Ruggedness 24 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit ... See More ⇒
hgd230n10al hgi230n10al.pdf
HGD230N10AL , HGI230N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 21.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 28 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 31 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 24 A ID (Package Limited) Lead Free, Halogen Free Application ... See More ⇒
Detailed specifications: HGD170N10AL, HGI170N10AL, HGD190N15SL, HGD195N15S, HGD195N15SL, HGD1K2N20ML, HGI1K2N20ML, HGD210N12SL, IRF3710, HGD230N10AL, HGI230N10AL, HGD290N10SL, HGI290N10SL, HGD2K4N25ML, HGI2K4N25ML, HGD320N20S, HGD480N15M
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