All MOSFET. HGD230N10A Datasheet

 

HGD230N10A Datasheet and Replacement


   Type Designator: HGD230N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-252
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HGD230N10A Datasheet (PDF)

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HGD230N10A

P-1HGD230N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching22RDS(on),typ mW Enhanced Body diode dv/dt capability31 AID (Slicon Limited) Enhanced Avalanche Ruggedness24 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit

 0.1. Size:965K  cn hunteck
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HGD230N10A

HGD230N10AL , HGI230N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level21.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability28RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness31 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested24 AID (Package Limited) Lead Free, Halogen FreeApplication

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History: DMN60H3D5SK3 | MTN2002ZW3 | TK2P60D | RTF020P02TL | IRFBG20 | DMN2300UFB4

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