HGD230N10AL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD230N10AL
Marking Code: GD230N10AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 117 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO-252
HGD230N10AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD230N10AL Datasheet (PDF)
hgd230n10al hgi230n10al.pdf
HGD230N10AL , HGI230N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level21.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability28RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness31 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested24 AID (Package Limited) Lead Free, Halogen FreeApplication
hgd230n10a.pdf
P-1HGD230N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching22RDS(on),typ mW Enhanced Body diode dv/dt capability31 AID (Slicon Limited) Enhanced Avalanche Ruggedness24 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit
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