All MOSFET. HGD2K4N25ML Datasheet

 

HGD2K4N25ML Datasheet and Replacement


   Type Designator: HGD2K4N25ML
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-252
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HGD2K4N25ML Datasheet (PDF)

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HGD2K4N25ML

HGD2K4N25ML , HGI2K4N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level180RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability190RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness8.82 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | DMP2104LP | DMN60H3D5SK3 | IRFBG20

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