HGD2K4N25ML Datasheet. Specs and Replacement
Type Designator: HGD2K4N25ML 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 12 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO-252
HGD2K4N25ML substitution
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HGD2K4N25ML datasheet
hgd2k4n25ml hgi2k4n25ml.pdf
HGD2K4N25ML , HGI2K4N25ML P-1 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching, Logic Level 180 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 190 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 8.82 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in ... See More ⇒
Detailed specifications: HGD1K2N20ML, HGI1K2N20ML, HGD210N12SL, HGD230N10A, HGD230N10AL, HGI230N10AL, HGD290N10SL, HGI290N10SL, P55NF06, HGI2K4N25ML, HGD320N20S, HGD480N15M, HGI480N15M, HGD650N15S, HGD650N15SL, HGD750N15M, HGD750N15ML
Keywords - HGD2K4N25ML MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
