HGD320N20S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD320N20S
Marking Code: GD320N20S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 124 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO-252
HGD320N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD320N20S Datasheet (PDF)
..1. Size:895K cn hunteck
hgd320n20s.pdf
hgd320n20s.pdf
P-1HGD320N20S200V N-Ch Power MOSFETFeature High Speed Power Switching 200 VVDS Enhanced Body diode dv/dt capability 28RDS(on),typ mW Enhanced Avalanche Ruggedness 50 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDrain UPSPin2TO-252 M
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