All MOSFET. HGD320N20S Datasheet

 

HGD320N20S Datasheet and Replacement


   Type Designator: HGD320N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO-252
 

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HGD320N20S Datasheet (PDF)

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HGD320N20S

P-1HGD320N20S200V N-Ch Power MOSFETFeature High Speed Power Switching 200 VVDS Enhanced Body diode dv/dt capability 28RDS(on),typ mW Enhanced Avalanche Ruggedness 50 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDrain UPSPin2TO-252 M

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History: IRF624S

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