HGD320N20S Datasheet. Specs and Replacement

Type Designator: HGD320N20S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 124 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO-252

HGD320N20S substitution

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HGD320N20S datasheet

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HGD320N20S

P-1 HGD320N20S 200V N-Ch Power MOSFET Feature High Speed Power Switching 200 V VDS Enhanced Body diode dv/dt capability 28 RDS(on),typ mW Enhanced Avalanche Ruggedness 50 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools Drain UPS Pin2 TO-252 M... See More ⇒

Detailed specifications: HGD210N12SL, HGD230N10A, HGD230N10AL, HGI230N10AL, HGD290N10SL, HGI290N10SL, HGD2K4N25ML, HGI2K4N25ML, 7N65, HGD480N15M, HGI480N15M, HGD650N15S, HGD650N15SL, HGD750N15M, HGD750N15ML, HGI750N15ML, HGI050N10AL

Keywords - HGD320N20S MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs