HGD650N15SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD650N15SL
Marking Code: GD650N15SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 8.2 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 43 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO-252
HGD650N15SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD650N15SL Datasheet (PDF)
hgd650n15sl.pdf
HGD650N15SL P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level58RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability66RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness18 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching an
hgd650n15s.pdf
HGD650N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching58RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability18 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in Telecoms
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