HGD750N15M Datasheet. Specs and Replacement

Type Designator: HGD750N15M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO-252

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HGD750N15M datasheet

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HGD750N15M

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HGD750N15M

HGD750N15ML HGI750N15ML P-1 , 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, logic level 63 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 72 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 18 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and ... See More ⇒

Detailed specifications: HGI290N10SL, HGD2K4N25ML, HGI2K4N25ML, HGD320N20S, HGD480N15M, HGI480N15M, HGD650N15S, HGD650N15SL, 2SK3878, HGD750N15ML, HGI750N15ML, HGI050N10AL, HGI080N08SL, HGD080N08SL, HGI090N06SL, HGD090N06SL, HGI120N10A

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