All MOSFET. HGD750N15M Datasheet

 

HGD750N15M Datasheet and Replacement


   Type Designator: HGD750N15M
   Marking Code: GD750N15M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 11 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-252
 

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HGD750N15M Datasheet (PDF)

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HGD750N15M

HGD750N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching65RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability18 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainTO-252Pin2 Power Tools

 0.1. Size:895K  cn hunteck
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HGD750N15M

HGD750N15ML HGI750N15ML P-1,150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, logic level63RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability72RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness18 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and

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