HGI750N15ML MOSFET. Datasheet pdf. Equivalent
Type Designator: HGI750N15ML
Marking Code: GI750N15ML
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 37 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO-251
HGI750N15ML Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGI750N15ML Datasheet (PDF)
..1. Size:895K cn hunteck
hgd750n15ml hgi750n15ml.pdf
hgd750n15ml hgi750n15ml.pdf
HGD750N15ML HGI750N15ML P-1,150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, logic level63RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability72RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness18 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and
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