All MOSFET. HGI200N10SL Datasheet

 

HGI200N10SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGI200N10SL
   Marking Code: GI200N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19.9 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-251

 HGI200N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGI200N10SL Datasheet (PDF)

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 hgi200n10sl hgd200n10sl.pdf

HGI200N10SL HGI200N10SL

HGI200N10SL HGD200N10SL P-1,100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness45 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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