All MOSFET. HGD200N10SL Datasheet

 

HGD200N10SL Datasheet and Replacement


   Type Designator: HGD200N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-252
      - MOSFET Cross-Reference Search

 

HGD200N10SL Datasheet (PDF)

 ..1. Size:965K  cn hunteck
 hgi200n10sl hgd200n10sl.pdf pdf_icon

HGD200N10SL

HGI200N10SL HGD200N10SL P-1,100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness45 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - HGD200N10SL MOSFET datasheet

 HGD200N10SL cross reference
 HGD200N10SL equivalent finder
 HGD200N10SL lookup
 HGD200N10SL substitution
 HGD200N10SL replacement

 

 
Back to Top

 


 
.