All MOSFET. HGD200N10SL Datasheet

 

HGD200N10SL Datasheet and Replacement


   Type Designator: HGD200N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-252
 

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HGD200N10SL Datasheet (PDF)

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HGD200N10SL

HGI200N10SL HGD200N10SL P-1,100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness45 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

Datasheet: HGD090N06SL , HGI120N10A , HGD120N10A , HGI120N10AL , HGD120N10AL , HGI130N12SL , HGD130N12SL , HGI200N10SL , 4N60 , HGK026N15S , HGK030N06S , HGM046NE6A , HGM046NE6AL , HGM059N08AL , HGM079N06SL , HGM090NE6A , HGM090NE6AL .

History: MTD30N10Q8 | MTDA0N10J3 | CEB50N10 | HGD130N12SL | APM4330KC | UF830L-TA3-T | UF830L-TF3-T

Keywords - HGD200N10SL MOSFET datasheet

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