HGD200N10SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD200N10SL
Marking Code: GD200N10SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 19.9 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 104 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO-252
HGD200N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD200N10SL Datasheet (PDF)
..1. Size:965K cn hunteck
hgi200n10sl hgd200n10sl.pdf
hgi200n10sl hgd200n10sl.pdf
HGI200N10SL HGD200N10SL P-1,100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness45 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
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