All MOSFET. HGM046NE6A Datasheet

 

HGM046NE6A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGM046NE6A
   Marking Code: M046NE6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 769 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: DFN3.3X3.3

 HGM046NE6A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGM046NE6A Datasheet (PDF)

 ..1. Size:1132K  cn hunteck
 hgm046ne6a.pdf

HGM046NE6A HGM046NE6A

HGM046NE6AP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching 4.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Ci

 0.1. Size:1141K  cn hunteck
 hgm046ne6al.pdf

HGM046NE6A HGM046NE6A

HGM046NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 4.2RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.1RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 69 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Pacakge Limited)Application Drain Sy

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