HGM046NE6A Datasheet. Specs and Replacement

Type Designator: HGM046NE6A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 769 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: DFN3.3X3.3

HGM046NE6A substitution

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HGM046NE6A datasheet

 ..1. Size:1132K  cn hunteck
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HGM046NE6A

HGM046NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Ci... See More ⇒

 0.1. Size:1141K  cn hunteck
 hgm046ne6al.pdf pdf_icon

HGM046NE6A

HGM046NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 4.2 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.1 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 69 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Pacakge Limited) Application Drain Sy... See More ⇒

Detailed specifications: HGI120N10AL, HGD120N10AL, HGI130N12SL, HGD130N12SL, HGI200N10SL, HGD200N10SL, HGK026N15S, HGK030N06S, IRFB3607, HGM046NE6AL, HGM059N08AL, HGM079N06SL, HGM090NE6A, HGM090NE6AL, HGM095NE4SL, HGM098N10AL, HGM110N08A

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