HGM059N08AL Datasheet. Specs and Replacement

Type Designator: HGM059N08AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: DFN3.3X3.3

HGM059N08AL substitution

- MOSFET ⓘ Cross-Reference Search

 

HGM059N08AL datasheet

 ..1. Size:1138K  cn hunteck
 hgm059n08al.pdf pdf_icon

HGM059N08AL

HGM059N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 5.2 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 62 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Pacakge Limited) Application Synchronou... See More ⇒

Detailed specifications: HGI130N12SL, HGD130N12SL, HGI200N10SL, HGD200N10SL, HGK026N15S, HGK030N06S, HGM046NE6A, HGM046NE6AL, IRF530, HGM079N06SL, HGM090NE6A, HGM090NE6AL, HGM095NE4SL, HGM098N10AL, HGM110N08A, HGM110N08AL, HGM120N06SL

Keywords - HGM059N08AL MOSFET specs

 HGM059N08AL cross reference

 HGM059N08AL equivalent finder

 HGM059N08AL pdf lookup

 HGM059N08AL substitution

 HGM059N08AL replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility