All MOSFET. HGM059N08AL Datasheet

 

HGM059N08AL Datasheet and Replacement


   Type Designator: HGM059N08AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: DFN3.3X3.3
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HGM059N08AL Datasheet (PDF)

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HGM059N08AL

HGM059N08ALP-180V N-Ch Power MOSFETFeature 80 VVDS High Speed Power Switching, Logic level 5.2RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 62 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Pacakge Limited)Application Synchronou

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History: LSF65R570GT | CSD16342Q5A

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