All MOSFET. HGM059N08AL Datasheet

 

HGM059N08AL Datasheet and Replacement


   Type Designator: HGM059N08AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: DFN3.3X3.3
 

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HGM059N08AL Datasheet (PDF)

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HGM059N08AL

HGM059N08ALP-180V N-Ch Power MOSFETFeature 80 VVDS High Speed Power Switching, Logic level 5.2RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 62 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Pacakge Limited)Application Synchronou

Datasheet: HGI130N12SL , HGD130N12SL , HGI200N10SL , HGD200N10SL , HGK026N15S , HGK030N06S , HGM046NE6A , HGM046NE6AL , AO4407 , HGM079N06SL , HGM090NE6A , HGM090NE6AL , HGM095NE4SL , HGM098N10AL , HGM110N08A , HGM110N08AL , HGM120N06SL .

History: AP13N50W-HF | BLS60R036-F | IXFT30N60P | IRFU3911PBF

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