All MOSFET. HGM079N06SL Datasheet

 

HGM079N06SL Datasheet and Replacement


   Type Designator: HGM079N06SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
   Package: DFN3.3X3.3
 

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HGM079N06SL Datasheet (PDF)

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HGM079N06SL

HGM079N06SL P-160V N-Ch Power MOSFETFeature 60 VVDS High Speed Power Switching, Logic Level 6.7RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.5RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 44.6 AID (Sillicon Limited) Lead Free, Halogen Free 40 AID (Package Limited)Application Hard Switching and High Speed Circuit Drain DFN3

Datasheet: HGD130N12SL , HGI200N10SL , HGD200N10SL , HGK026N15S , HGK030N06S , HGM046NE6A , HGM046NE6AL , HGM059N08AL , IRLB4132 , HGM090NE6A , HGM090NE6AL , HGM095NE4SL , HGM098N10AL , HGM110N08A , HGM110N08AL , HGM120N06SL , HGM120N10AL .

History: AFC3326WS | CEP20A03 | AP9960GH-HF | 2N5905 | SSM3K15F | CEM4279 | SSW80R160SFD

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