HGM079N06SL Datasheet. Specs and Replacement

Type Designator: HGM079N06SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 415 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm

Package: DFN3.3X3.3

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HGM079N06SL datasheet

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HGM079N06SL

HGM079N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 6.7 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.5 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 44.6 A ID (Sillicon Limited) Lead Free, Halogen Free 40 A ID (Package Limited) Application Hard Switching and High Speed Circuit Drain DFN3... See More ⇒

Detailed specifications: HGD130N12SL, HGI200N10SL, HGD200N10SL, HGK026N15S, HGK030N06S, HGM046NE6A, HGM046NE6AL, HGM059N08AL, CS150N03A8, HGM090NE6A, HGM090NE6AL, HGM095NE4SL, HGM098N10AL, HGM110N08A, HGM110N08AL, HGM120N06SL, HGM120N10AL

Keywords - HGM079N06SL MOSFET specs

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