All MOSFET. HGM090NE6A Datasheet

 

HGM090NE6A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGM090NE6A
   Marking Code: M090NE6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 567 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DFN3.3X3.3

 HGM090NE6A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGM090NE6A Datasheet (PDF)

 ..1. Size:1174K  cn hunteck
 hgm090ne6a.pdf

HGM090NE6A HGM090NE6A

HGM090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching 65 VVDS Enhanced Body diode dv/dt capability 7.8RDS(on),typ mW Enhanced Avalanche Ruggedness 38 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 AID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switchin

 0.1. Size:1314K  cn hunteck
 hgm090ne6al.pdf

HGM090NE6A HGM090NE6A

HGM090NE6AL P-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 39 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Package Limited)Application Synchronou

 9.1. Size:1140K  cn hunteck
 hgm098n10al.pdf

HGM090NE6A HGM090NE6A

HGM098N10AL P-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 8.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 47.2 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Package Limited)Application Synchr

 9.2. Size:1142K  cn hunteck
 hgm095ne4sl.pdf

HGM090NE6A HGM090NE6A

HGM095NE4SL P-145V N-Ch Power MOSFETFeature 45 VVDS High Speed Power Switching, Logic Level 7.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 26 A Lead Free, Halogen Free ID (Package Limited)Application Synchronous

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