HGM120N06SL Datasheet. Specs and Replacement

Type Designator: HGM120N06SL  📄📄 

Marking Code: M120N06L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V

Qg ⓘ - Total Gate Charge: 18.5 nC

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 318 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: DFN3.3X3.3

HGM120N06SL substitution

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HGM120N06SL datasheet

 ..1. Size:1141K  cn hunteck
 hgm120n06sl.pdf pdf_icon

HGM120N06SL

HGM120N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 8.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 33 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 26 A Lead Free, Halogen Free ID (Package Limited) Application Synchronous ... See More ⇒

 7.1. Size:1141K  cn hunteck
 hgm120n10al.pdf pdf_icon

HGM120N06SL

HGM120N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 11.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 15.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 36 A ID (Silicon limited) 100% UIS Tested, 100% Rg Tested 36 A ID (Package Limited) Lead Free, Halogen Free Application Synch... See More ⇒

Detailed specifications: HGM059N08AL, HGM079N06SL, HGM090NE6A, HGM090NE6AL, HGM095NE4SL, HGM098N10AL, HGM110N08A, HGM110N08AL, BS170, HGM120N10AL, HGM170N10AL, HGM210N12SL, HGM230N10AL, HGM290N10SL, HGN012N03AL, HGN016N04BL, HGN021N06SL

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