All MOSFET. HGM120N06SL Datasheet

 

HGM120N06SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGM120N06SL
   Marking Code: M120N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.5 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: DFN3.3X3.3

 HGM120N06SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGM120N06SL Datasheet (PDF)

 ..1. Size:1141K  cn hunteck
 hgm120n06sl.pdf

HGM120N06SL HGM120N06SL

HGM120N06SL P-160V N-Ch Power MOSFETFeature 60 VVDS High Speed Power Switching, Logic Level 8.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 33 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 26 A Lead Free, Halogen Free ID (Package Limited)Application Synchronous

 7.1. Size:1141K  cn hunteck
 hgm120n10al.pdf

HGM120N06SL HGM120N06SL

HGM120N10ALP-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 36 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested 36 AID (Package Limited) Lead Free, Halogen Free Application Synch

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MC3541 | MRF176GV

 

 
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