All MOSFET. HGM170N10AL Datasheet

 

HGM170N10AL Datasheet and Replacement


   Type Designator: HGM170N10AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 147 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: DFN3.3X3.3
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HGM170N10AL Datasheet (PDF)

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HGM170N10AL

HGM170N10AL P-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 14RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 22RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 28.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HGM046NE6A | QS8K11 | UF630G-TM3-T | 2SJ420 | TPC8014 | WMB037N10HGS | TPC8115

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