All MOSFET. HGM170N10AL Datasheet

 

HGM170N10AL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGM170N10AL
   Marking Code: M170N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 147 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: DFN3.3X3.3

 HGM170N10AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGM170N10AL Datasheet (PDF)

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 hgm170n10al.pdf

HGM170N10AL HGM170N10AL

HGM170N10AL P-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 14RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 22RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 28.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS

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History: IRFB4110Q | MTP2N40

 

 
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