HGM170N10AL Datasheet. Specs and Replacement

Type Designator: HGM170N10AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 147 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: DFN3.3X3.3

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HGM170N10AL datasheet

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HGM170N10AL

HGM170N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 14 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 22 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 28.4 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS ... See More ⇒

Detailed specifications: HGM090NE6A, HGM090NE6AL, HGM095NE4SL, HGM098N10AL, HGM110N08A, HGM110N08AL, HGM120N06SL, HGM120N10AL, IRFP250, HGM210N12SL, HGM230N10AL, HGM290N10SL, HGN012N03AL, HGN016N04BL, HGN021N06SL, HGN022NE4SL, HGN023NE6A

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