HGM210N12SL Datasheet. Specs and Replacement

Type Designator: HGM210N12SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 143 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: DFN3.3X3.3

HGM210N12SL substitution

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HGM210N12SL datasheet

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HGM210N12SL

HGM210N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 20 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 25 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 29 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 26 A Lead Free, Halogen Free ID (Package Limited) Application Synchronou... See More ⇒

Detailed specifications: HGM090NE6AL, HGM095NE4SL, HGM098N10AL, HGM110N08A, HGM110N08AL, HGM120N06SL, HGM120N10AL, HGM170N10AL, IRF1407, HGM230N10AL, HGM290N10SL, HGN012N03AL, HGN016N04BL, HGN021N06SL, HGN022NE4SL, HGN023NE6A, HGN023NE6AL

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