HGM290N10SL Datasheet. Specs and Replacement

Type Designator: HGM290N10SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: DFN3.3X3.3

HGM290N10SL substitution

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HGM290N10SL datasheet

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HGM290N10SL

HGM290N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 22.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 26 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 21 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS ... See More ⇒

Detailed specifications: HGM098N10AL, HGM110N08A, HGM110N08AL, HGM120N06SL, HGM120N10AL, HGM170N10AL, HGM210N12SL, HGM230N10AL, 10N65, HGN012N03AL, HGN016N04BL, HGN021N06SL, HGN022NE4SL, HGN023NE6A, HGN023NE6AL, HGN024N06SL, HGN027N06S

Keywords - HGM290N10SL MOSFET specs

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