All MOSFET. HGM290N10SL Datasheet

 

HGM290N10SL Datasheet and Replacement


   Type Designator: HGM290N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: DFN3.3X3.3
 

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HGM290N10SL Datasheet (PDF)

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HGM290N10SL

HGM290N10SL P-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 22.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 26RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 21 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS

Datasheet: HGM098N10AL , HGM110N08A , HGM110N08AL , HGM120N06SL , HGM120N10AL , HGM170N10AL , HGM210N12SL , HGM230N10AL , STP80NF70 , HGN012N03AL , HGN016N04BL , HGN021N06SL , HGN022NE4SL , HGN023NE6A , HGN023NE6AL , HGN024N06SL , HGN027N06S .

History: FTK2N65P

Keywords - HGM290N10SL MOSFET datasheet

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