All MOSFET. HGN012N03AL Datasheet

 

HGN012N03AL Datasheet and Replacement


   Type Designator: HGN012N03AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 2492 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: DFN5X6
 

 HGN012N03AL substitution

   - MOSFET ⓘ Cross-Reference Search

 

HGN012N03AL Datasheet (PDF)

 ..1. Size:900K  cn hunteck
 hgn012n03al.pdf pdf_icon

HGN012N03AL

HGN012N03AL P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability1.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness178 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rec

 9.1. Size:1236K  cn hunteck
 hgn016n04bl.pdf pdf_icon

HGN012N03AL

HGN016N04BLP-140V N-Ch Power MOSFETFeature 40 VVDS High Speed Power Switching, Logic Level 1.3RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 2RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 175 AID Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial DFN5*6 Gate

Datasheet: HGM110N08A , HGM110N08AL , HGM120N06SL , HGM120N10AL , HGM170N10AL , HGM210N12SL , HGM230N10AL , HGM290N10SL , 10N65 , HGN016N04BL , HGN021N06SL , HGN022NE4SL , HGN023NE6A , HGN023NE6AL , HGN024N06SL , HGN027N06S , HGN028N08A .

History: HGN021N06SL | HGN016N04BL | PSMN1R2-25YLD

Keywords - HGN012N03AL MOSFET datasheet

 HGN012N03AL cross reference
 HGN012N03AL equivalent finder
 HGN012N03AL lookup
 HGN012N03AL substitution
 HGN012N03AL replacement

 

 
Back to Top

 


 
.