HGN016N04BL Datasheet. Specs and Replacement

Type Designator: HGN016N04BL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40.4 nS

Cossⓘ - Output Capacitance: 1214 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: DFN5X6

HGN016N04BL substitution

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HGN016N04BL datasheet

 ..1. Size:1236K  cn hunteck
 hgn016n04bl.pdf pdf_icon

HGN016N04BL

HGN016N04BL P-1 40V N-Ch Power MOSFET Feature 40 V VDS High Speed Power Switching, Logic Level 1.3 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 2 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 175 A ID Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial DFN5*6 Gate ... See More ⇒

 9.1. Size:900K  cn hunteck
 hgn012n03al.pdf pdf_icon

HGN016N04BL

HGN012N03AL P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 1.3 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 1.8 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 178 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rec... See More ⇒

Detailed specifications: HGM110N08AL, HGM120N06SL, HGM120N10AL, HGM170N10AL, HGM210N12SL, HGM230N10AL, HGM290N10SL, HGN012N03AL, RFP50N06, HGN021N06SL, HGN022NE4SL, HGN023NE6A, HGN023NE6AL, HGN024N06SL, HGN027N06S, HGN028N08A, HGN028NE6A

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