All MOSFET. HGN016N04BL Datasheet

 

HGN016N04BL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGN016N04BL
   Marking Code: GN016N04BL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 68.9 nC
   trⓘ - Rise Time: 40.4 nS
   Cossⓘ - Output Capacitance: 1214 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: DFN5X6

 HGN016N04BL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGN016N04BL Datasheet (PDF)

 ..1. Size:1236K  cn hunteck
 hgn016n04bl.pdf

HGN016N04BL HGN016N04BL

HGN016N04BLP-140V N-Ch Power MOSFETFeature 40 VVDS High Speed Power Switching, Logic Level 1.3RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 2RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 175 AID Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial DFN5*6 Gate

 9.1. Size:900K  cn hunteck
 hgn012n03al.pdf

HGN016N04BL HGN016N04BL

HGN012N03AL P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability1.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness178 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rec

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