HGN090N06SL Datasheet. Specs and Replacement

Type Designator: HGN090N06SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 415 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DFN5X6

HGN090N06SL substitution

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HGN090N06SL datasheet

 ..1. Size:764K  cn hunteck
 hgn090n06sl.pdf pdf_icon

HGN090N06SL

HGN090N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 7.3 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 10 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 62 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous ... See More ⇒

 7.1. Size:1316K  cn hunteck
 hgn090ne6al.pdf pdf_icon

HGN090N06SL

HGN090NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 55 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A Lead Free, Halogen Free ID (Package Limited) Application Drain Syn... See More ⇒

 7.2. Size:932K  cn hunteck
 hgn090ne6a.pdf pdf_icon

HGN090N06SL

HGN090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 54 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A ID (Package Limited) Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and Hig... See More ⇒

 8.1. Size:1112K  cn hunteck
 hgn090ae6al.pdf pdf_icon

HGN090N06SL

HGN090AE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.4 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 42 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 28 A Lead Free, Halogen Free ID (Package Limited) Drain1 Drain2 Application ... See More ⇒

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Detailed specifications: HGN080N08SL, HGN080N10A, HGN080N10AL, HGN080N10S, HGN080N10SL, HGN088N15S, HGN088N15SL, HGN090AE6AL, IRFP260N, HGN090NE6A, HGN090NE6AL, HGN093N12S, HGN093N12SL, HGN095NE4SL, HGN098N10A, HGN098N10AL, HGN098N10SL

Keywords - HGN090N06SL MOSFET specs

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