HGN090N06SL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HGN090N06SL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 62.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 415 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: DFN5X6
Аналог (замена) для HGN090N06SL
HGN090N06SL Datasheet (PDF)
hgn090n06sl.pdf

HGN090N06SLP-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness62 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous
hgn090ne6al.pdf

HGN090NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 55 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A Lead Free, Halogen Free ID (Package Limited)Application Drain Syn
hgn090ne6a.pdf

HGN090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness54 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and Hig
hgn090ae6al.pdf

HGN090AE6AL P-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 42 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 28 A Lead Free, Halogen Free ID (Package Limited)Drain1 Drain2 Application
Другие MOSFET... HGN080N08SL , HGN080N10A , HGN080N10AL , HGN080N10S , HGN080N10SL , HGN088N15S , HGN088N15SL , HGN090AE6AL , 10N60 , HGN090NE6A , HGN090NE6AL , HGN093N12S , HGN093N12SL , HGN095NE4SL , HGN098N10A , HGN098N10AL , HGN098N10SL .
History: FDFME2P823ZT | NCE60H15AD | OSG70R1KPF | IXTQ26N50P | MP15N60EIC | CS7N70F
History: FDFME2P823ZT | NCE60H15AD | OSG70R1KPF | IXTQ26N50P | MP15N60EIC | CS7N70F



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