All MOSFET. HGN100N12S Datasheet

 

HGN100N12S Datasheet and Replacement


   Type Designator: HGN100N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFN5X6
 

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HGN100N12S Datasheet (PDF)

 ..1. Size:1064K  cn hunteck
 hgn100n12s.pdf pdf_icon

HGN100N12S

P-1HGN100N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching7.8RDS(on),typ mW Enhanced Body diode dv/dt capability102 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed Ci

 0.1. Size:1074K  cn hunteck
 hgn100n12sl.pdf pdf_icon

HGN100N12S

P-1HGN100N12SL120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness83 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplication Synchronous Rectification in

Datasheet: HGN090NE6AL , HGN093N12S , HGN093N12SL , HGN095NE4SL , HGN098N10A , HGN098N10AL , HGN098N10SL , HGN099N15S , STP75NF75 , HGN100N12SL , HGN110N08A , HGN110N08AL , HGN110N10SL , HGN115N15S , HGN115N15SL , HGN119N15S , HGN120N06SL .

Keywords - HGN100N12S MOSFET datasheet

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