HGN100N12S Datasheet. Specs and Replacement

Type Designator: HGN100N12S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 235 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: DFN5X6

HGN100N12S substitution

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HGN100N12S datasheet

 ..1. Size:1064K  cn hunteck
 hgn100n12s.pdf pdf_icon

HGN100N12S

P-1 HGN100N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching 7.8 RDS(on),typ mW Enhanced Body diode dv/dt capability 102 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Ci... See More ⇒

 0.1. Size:1074K  cn hunteck
 hgn100n12sl.pdf pdf_icon

HGN100N12S

P-1 HGN100N12SL 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching,Logic level 7.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 83 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free Application Synchronous Rectification in... See More ⇒

Detailed specifications: HGN090NE6AL, HGN093N12S, HGN093N12SL, HGN095NE4SL, HGN098N10A, HGN098N10AL, HGN098N10SL, HGN099N15S, 7N65, HGN100N12SL, HGN110N08A, HGN110N08AL, HGN110N10SL, HGN115N15S, HGN115N15SL, HGN119N15S, HGN120N06SL

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