HGN130N12S Datasheet. Specs and Replacement

Type Designator: HGN130N12S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: DFN5X6

HGN130N12S substitution

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HGN130N12S datasheet

 ..1. Size:904K  cn hunteck
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HGN130N12S

P-1 HGN130N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching 10 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 62.7 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switc... See More ⇒

 0.1. Size:910K  cn hunteck
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HGN130N12S

P-1 HGN130N12SL 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 10.3 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 61 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous... See More ⇒

Detailed specifications: HGN110N08AL, HGN110N10SL, HGN115N15S, HGN115N15SL, HGN119N15S, HGN120N06SL, HGN120N10A, HGN120N10AL, AO3401, HGN130N12SL, HGN155N15S, HGN170A10AL, HGN170N10AL, HGN190N15S, HGN195N15S, HGN195N15SL, HGN200N10SL

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