HGN155N15S Datasheet. Specs and Replacement

Type Designator: HGN155N15S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 183 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: DFN5X6

HGN155N15S substitution

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HGN155N15S datasheet

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HGN155N15S

P-1 HGN155N15S 150V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 150 V VDS Enhanced Body diode dv/dt capability 13 RDS(on),typ mW Enhanced Avalanche Ruggedness 53 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain Power Tools ... See More ⇒

Detailed specifications: HGN115N15S, HGN115N15SL, HGN119N15S, HGN120N06SL, HGN120N10A, HGN120N10AL, HGN130N12S, HGN130N12SL, IRFP260, HGN170A10AL, HGN170N10AL, HGN190N15S, HGN195N15S, HGN195N15SL, HGN200N10SL, HGN210N12SL, HGN230A10AL

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