All MOSFET. HGN155N15S Datasheet

 

HGN155N15S Datasheet and Replacement


   Type Designator: HGN155N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: DFN5X6
 

 HGN155N15S substitution

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HGN155N15S Datasheet (PDF)

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HGN155N15S

P-1HGN155N15S150V N-Ch Power MOSFETFeature High Speed Power Smooth Switching150 VVDS Enhanced Body diode dv/dt capability13RDS(on),typ mW Enhanced Avalanche Ruggedness53 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrain Power Tools

Datasheet: HGN115N15S , HGN115N15SL , HGN119N15S , HGN120N06SL , HGN120N10A , HGN120N10AL , HGN130N12S , HGN130N12SL , 8205A , HGN170A10AL , HGN170N10AL , HGN190N15S , HGN195N15S , HGN195N15SL , HGN200N10SL , HGN210N12SL , HGN230A10AL .

History: BRCS060N03YB | SI1021R | IGLD60R190D1

Keywords - HGN155N15S MOSFET datasheet

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