HGN190N15S Datasheet and Replacement
Type Designator: HGN190N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: DFN5X6
HGN190N15S substitution
HGN190N15S Datasheet (PDF)
hgn190n15s.pdf
HGN190N15S P-1150V N-Ch Power MOSFET150 VVDSFeature15RDS(on),typ m Optimized for high speed smooth switching19RDS(on),max m Enhanced Body diode dv/dt capability60 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain
hgn195n15s.pdf
P-1HGN195N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching17.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability47.3 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circui
hgn195n15sl.pdf
P-1HGN195N15SL150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness46 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrai
Datasheet: HGN120N06SL , HGN120N10A , HGN120N10AL , HGN130N12S , HGN130N12SL , HGN155N15S , HGN170A10AL , HGN170N10AL , SKD502T , HGN195N15S , HGN195N15SL , HGN200N10SL , HGN210N12SL , HGN230A10AL , HGN230N10AL , HGN240N15S , HGN290N10SL .
Keywords - HGN190N15S MOSFET datasheet
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