HGN190N15S Datasheet. Specs and Replacement

Type Designator: HGN190N15S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: DFN5X6

HGN190N15S substitution

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HGN190N15S datasheet

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HGN190N15S

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HGN190N15S

P-1 HGN195N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 17.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 47.3 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circui... See More ⇒

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HGN190N15S

P-1 HGN195N15SL 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, Logic Level 17.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 46 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drai... See More ⇒

Detailed specifications: HGN120N06SL, HGN120N10A, HGN120N10AL, HGN130N12S, HGN130N12SL, HGN155N15S, HGN170A10AL, HGN170N10AL, SKD502T, HGN195N15S, HGN195N15SL, HGN200N10SL, HGN210N12SL, HGN230A10AL, HGN230N10AL, HGN240N15S, HGN290N10SL

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