All MOSFET. HGN200N10SL Datasheet

 

HGN200N10SL Datasheet and Replacement


   Type Designator: HGN200N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN5X6
 

 HGN200N10SL substitution

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HGN200N10SL Datasheet (PDF)

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HGN200N10SL

HGN200N10SL P-1100V N-Ch Power MOSFET100 VFeature VDS15.5 Optimized for high speed switching, Logic Level RDS(on),typ VGS=10V mW20RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability42 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in

Datasheet: HGN130N12S , HGN130N12SL , HGN155N15S , HGN170A10AL , HGN170N10AL , HGN190N15S , HGN195N15S , HGN195N15SL , RFP50N06 , HGN210N12SL , HGN230A10AL , HGN230N10AL , HGN240N15S , HGN290N10SL , HGN320N20S , HGN320N20SL , HGN480N15M .

History: 8N80G-TF1-T | MCU20P10 | RU30P3B | CSD23202W10 | RU30P4B | AP03N40AI-HF | R5019ANX

Keywords - HGN200N10SL MOSFET datasheet

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