HGN200N10SL Datasheet. Specs and Replacement

Type Designator: HGN200N10SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 104 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: DFN5X6

HGN200N10SL substitution

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HGN200N10SL datasheet

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HGN200N10SL

HGN200N10SL P-1 100V N-Ch Power MOSFET 100 V Feature VDS 15.5 Optimized for high speed switching, Logic Level RDS(on),typ VGS=10V mW 20 RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability 42 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in ... See More ⇒

Detailed specifications: HGN130N12S, HGN130N12SL, HGN155N15S, HGN170A10AL, HGN170N10AL, HGN190N15S, HGN195N15S, HGN195N15SL, AON7410, HGN210N12SL, HGN230A10AL, HGN230N10AL, HGN240N15S, HGN290N10SL, HGN320N20S, HGN320N20SL, HGN480N15M

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