HGN230N10AL Datasheet. Specs and Replacement

Type Designator: HGN230N10AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: DFN5X6

HGN230N10AL substitution

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HGN230N10AL datasheet

 ..1. Size:899K  cn hunteck
 hgn230n10al.pdf pdf_icon

HGN230N10AL

HGN230N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 21.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 28 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 29 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 22.5 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous ... See More ⇒

 8.1. Size:931K  cn hunteck
 hgn230a10al.pdf pdf_icon

HGN230N10AL

HGN230A10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 21.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 28 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 23 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain1 ... See More ⇒

Detailed specifications: HGN170A10AL, HGN170N10AL, HGN190N15S, HGN195N15S, HGN195N15SL, HGN200N10SL, HGN210N12SL, HGN230A10AL, IRF1010E, HGN240N15S, HGN290N10SL, HGN320N20S, HGN320N20SL, HGN480N15M, HGN640N25S, HGN650N15S, HGN650N15SL

Keywords - HGN230N10AL MOSFET specs

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