HGN290N10SL Datasheet. Specs and Replacement

Type Designator: HGN290N10SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: DFN5X6

HGN290N10SL substitution

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HGN290N10SL datasheet

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HGN290N10SL

HGN290N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 21 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 25 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 30 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous ... See More ⇒

Detailed specifications: HGN190N15S, HGN195N15S, HGN195N15SL, HGN200N10SL, HGN210N12SL, HGN230A10AL, HGN230N10AL, HGN240N15S, AON6380, HGN320N20S, HGN320N20SL, HGN480N15M, HGN640N25S, HGN650N15S, HGN650N15SL, HGP028NE6AL, HGP035N08AL

Keywords - HGN290N10SL MOSFET specs

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