SP2013 PDF and Equivalents Search

 

SP2013 Specs and Replacement

Type Designator: SP2013

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.67 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 81 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TSON3.3X3.3

SP2013 substitution

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SP2013 datasheet

 ..1. Size:114K  samhop
 sp2013.pdf pdf_icon

SP2013

Green Product SP2013 a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20 @ VGS=-4.5V Suface Mount Package. 21 @ VGS=-4.0V -20V -8.5A 22 @ VGS=-3.7V 25 @ VGS=-3.1V 28 @ VGS=-2.5V D 5 4 G 6 3 D S 7 2 D S Pin 1 D 8... See More ⇒

 9.1. Size:368K  st
 sgsp201.pdf pdf_icon

SP2013

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Detailed specifications: SP2106, FDS8935, FDS8949, FDS8949F085, FDS8958AF085, SP2103, SP2102, FDS8958B, IRF830, SP07N65, FDS8978, 2SK3116B, FDS8984, SDU07N65, FDS8984F085, SDU06N60, FDS9400A

Keywords - SP2013 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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