SP2013 Datasheet and Replacement
Type Designator: SP2013
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 81 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TSON3.3X3.3
SP2013 substitution
SP2013 Datasheet (PDF)
sp2013.pdf
GreenProductSP2013aS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.20 @ VGS=-4.5VSuface Mount Package.21 @ VGS=-4.0V -20V -8.5A 22 @ VGS=-3.7V25 @ VGS=-3.1V28 @ VGS=-2.5VD 5 4 G6 3D S7 2D SPin 1D 8
Datasheet: SP2106 , FDS8935 , FDS8949 , FDS8949F085 , FDS8958AF085 , SP2103 , SP2102 , FDS8958B , IRF1405 , SP07N65 , FDS8978 , 2SK3116B , FDS8984 , SDU07N65 , FDS8984F085 , SDU06N60 , FDS9400A .
History: FDS8449F085 | G3N15 | SML802R4CN | SVSP60R090LHD4TR | FDMS7672AS | PHW11N50E | FDD3682
Keywords - SP2013 MOSFET datasheet
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History: FDS8449F085 | G3N15 | SML802R4CN | SVSP60R090LHD4TR | FDMS7672AS | PHW11N50E | FDD3682
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