HGN320N20S Datasheet and Replacement
Type Designator: HGN320N20S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 124 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: DFN5X6
HGN320N20S substitution
HGN320N20S Datasheet (PDF)
hgn320n20s.pdf

P-1HGN320N20S200V N-Ch Power MOSFETFeature High Speed Power Switching 200 VVDS Enhanced Body diode dv/dt capability 28RDS(on),typ mW Enhanced Avalanche Ruggedness 42 AID 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDFN5*6Gate Power Tools UPS M
hgn320n20sl.pdf

P-1HGN320N20SL200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Switching,Logic Level28RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability33RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness41 AID 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed C
Datasheet: HGN195N15S , HGN195N15SL , HGN200N10SL , HGN210N12SL , HGN230A10AL , HGN230N10AL , HGN240N15S , HGN290N10SL , STP80NF70 , HGN320N20SL , HGN480N15M , HGN640N25S , HGN650N15S , HGN650N15SL , HGP028NE6AL , HGP035N08AL , HGP042N10AL .
History: IPG20N06S2L-50 | JMTK3004A | IPG20N04S4L-08 | JMTK3002B | AM4415P | CJ3134KW | CJ3404-HF
Keywords - HGN320N20S MOSFET datasheet
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History: IPG20N06S2L-50 | JMTK3004A | IPG20N04S4L-08 | JMTK3002B | AM4415P | CJ3134KW | CJ3404-HF



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