All MOSFET. HGN320N20SL Datasheet

 

HGN320N20SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGN320N20SL
   Marking Code: GN320N20SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 41 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: DFN5X6

 HGN320N20SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGN320N20SL Datasheet (PDF)

 ..1. Size:906K  cn hunteck
hgn320n20sl.pdf

HGN320N20SL
HGN320N20SL

P-1HGN320N20SL200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Switching,Logic Level28RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability33RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness41 AID 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed C

 4.1. Size:896K  cn hunteck
hgn320n20s.pdf

HGN320N20SL
HGN320N20SL

P-1HGN320N20S200V N-Ch Power MOSFETFeature High Speed Power Switching 200 VVDS Enhanced Body diode dv/dt capability 28RDS(on),typ mW Enhanced Avalanche Ruggedness 42 AID 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDFN5*6Gate Power Tools UPS M

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History: AS3434E | AUIRF3710Z | AO4826

 

 
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