HGN320N20SL Datasheet and Replacement
Type Designator: HGN320N20SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 41 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 124 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: DFN5X6
HGN320N20SL substitution
HGN320N20SL Datasheet (PDF)
hgn320n20sl.pdf

P-1HGN320N20SL200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Switching,Logic Level28RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability33RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness41 AID 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed C
hgn320n20s.pdf

P-1HGN320N20S200V N-Ch Power MOSFETFeature High Speed Power Switching 200 VVDS Enhanced Body diode dv/dt capability 28RDS(on),typ mW Enhanced Avalanche Ruggedness 42 AID 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDFN5*6Gate Power Tools UPS M
Datasheet: HGN195N15SL , HGN200N10SL , HGN210N12SL , HGN230A10AL , HGN230N10AL , HGN240N15S , HGN290N10SL , HGN320N20S , IRLB4132 , HGN480N15M , HGN640N25S , HGN650N15S , HGN650N15SL , HGP028NE6AL , HGP035N08AL , HGP042N10AL , HGP045NE4SL .
History: NVMTS0D7N04C | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | BRCS4294SC | SM140R50CT1TL
Keywords - HGN320N20SL MOSFET datasheet
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History: NVMTS0D7N04C | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | BRCS4294SC | SM140R50CT1TL



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