HGN480N15M Datasheet and Replacement
Type Designator: HGN480N15M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 27 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 57 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: DFN5X6
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HGN480N15M Datasheet (PDF)
hgn480n15m.pdf

HGN480N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching44RDS(on),typ mW Enhanced Body diode dv/dt capability27 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsGate UPSDFN5
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: LSF65R570GT | CSD16342Q5A
Keywords - HGN480N15M MOSFET datasheet
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History: LSF65R570GT | CSD16342Q5A



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