All MOSFET. HGN640N25S Datasheet

 

HGN640N25S Datasheet and Replacement


   Type Designator: HGN640N25S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: DFN5X6
 

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HGN640N25S Datasheet (PDF)

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HGN640N25S

HGN640N25S P-1250V N-Ch Power MOSFETFeature 250 VVDS High Speed Power Switching 50RDS(on),typ mW Enhanced Body diode dv/dt capability 29 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Drain Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Gate Power Tools DFN5*6

Datasheet: HGN210N12SL , HGN230A10AL , HGN230N10AL , HGN240N15S , HGN290N10SL , HGN320N20S , HGN320N20SL , HGN480N15M , IRFP250 , HGN650N15S , HGN650N15SL , HGP028NE6AL , HGP035N08AL , HGP042N10AL , HGP045NE4SL , HGP050N10AL , HGP070N12SL .

History: OSG70R1K4FF | SLD60R380S2

Keywords - HGN640N25S MOSFET datasheet

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