HGN640N25S Datasheet. Specs and Replacement

Type Designator: HGN640N25S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 104 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm

Package: DFN5X6

HGN640N25S substitution

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HGN640N25S datasheet

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HGN640N25S

HGN640N25S P-1 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Switching 50 RDS(on),typ mW Enhanced Body diode dv/dt capability 29 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Drain Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Gate Power Tools DFN5*6 ... See More ⇒

Detailed specifications: HGN210N12SL, HGN230A10AL, HGN230N10AL, HGN240N15S, HGN290N10SL, HGN320N20S, HGN320N20SL, HGN480N15M, AON7506, HGN650N15S, HGN650N15SL, HGP028NE6AL, HGP035N08AL, HGP042N10AL, HGP045NE4SL, HGP050N10AL, HGP070N12SL

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