SP07N65 Datasheet. Specs and Replacement

Type Designator: SP07N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.5 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.68 Ohm

Package: DFN5X6

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SP07N65 datasheet

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SP07N65

Green Product SP07N65 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 650V 1A 1.68 @ VGS=10V Suface Mount Package. PIN 1 5 6 7 8 DFN 5x6 1 2 3 4 (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Sy... See More ⇒

Detailed specifications: FDS8935, FDS8949, FDS8949F085, FDS8958AF085, SP2103, SP2102, FDS8958B, SP2013, IRFB31N20D, FDS8978, 2SK3116B, FDS8984, SDU07N65, FDS8984F085, SDU06N60, FDS9400A, FDS9431A

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