SP07N65 Datasheet and Replacement
Type Designator: SP07N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16.5 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.68 Ohm
Package: DFN5X6
SP07N65 substitution
SP07N65 Datasheet (PDF)
sp07n65.pdf
GreenProductSP07N65aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.650V 1A 1.68 @ VGS=10VSuface Mount Package.PIN 1 5 6 7 8DFN 5x6 1 2 3 4(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSy
Datasheet: FDS8935 , FDS8949 , FDS8949F085 , FDS8958AF085 , SP2103 , SP2102 , FDS8958B , SP2013 , EMB04N03H , FDS8978 , 2SK3116B , FDS8984 , SDU07N65 , FDS8984F085 , SDU06N60 , FDS9400A , FDS9431A .
History: MEM610
Keywords - SP07N65 MOSFET datasheet
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History: MEM610
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