HGP1K2N25ML MOSFET Datasheet: N-Ch, 250V, 25A. Full specification with pinout and replacement list

HGP1K2N25ML Specs and Replacement

   Type Designator: HGP1K2N25ML
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO-220

HGP1K2N25ML substitution

- MOSFET ⓘ Cross-Reference Search

HGP1K2N25ML datasheet

..1. Size:823K cn hunteck
hgp1k2n25ml.pdf pdf_icon

HGP1K2N25ML P-1 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching, Logic Level 87 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 93 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 25 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Spe... See More ⇒

6.1. Size:832K cn hunteck
hgp1k2n20ml.pdf pdf_icon

HGP1K2N20ML P-1 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching, Logic Level 95 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 106 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 18 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Sp... See More ⇒

Detailed specifications: HGP080N10S , HGP080N10SL , HGP098N10S , HGP100N12SL , HGP130N12SL , HGP190N15SL , HGP195N15SL , HGP1K2N20ML , IRF520 , HGP230N10A , HGP2K4N25ML , HGS038NE4SL , HGS046NE6A , HGS046NE6AL , HGS048N06SL , HGS054NE4SL , HGS059N08A .