All MOSFET. HGP1K2N25ML Datasheet

 

HGP1K2N25ML Datasheet and Replacement


   Type Designator: HGP1K2N25ML
   Marking Code: GP1K2N25ML
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 20 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO-220
 

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HGP1K2N25ML Datasheet (PDF)

 ..1. Size:823K  cn hunteck
 hgp1k2n25ml.pdf pdf_icon

HGP1K2N25ML

HGP1K2N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level87RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability93RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness25 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Spe

 6.1. Size:832K  cn hunteck
 hgp1k2n20ml.pdf pdf_icon

HGP1K2N25ML

HGP1K2N20ML P-1200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching, Logic Level95RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability106RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness18 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Sp

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History: FCPF220N80

Keywords - HGP1K2N25ML MOSFET datasheet

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