All MOSFET. HGS038NE4SL Datasheet

 

HGS038NE4SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGS038NE4SL
   Marking Code: GS038NE4SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1367 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: SOIC-8

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HGS038NE4SL Datasheet (PDF)

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 hgs038ne4sl.pdf

HGS038NE4SL HGS038NE4SL

HGS038NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level3.2RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.9RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness20 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swit

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