HGS038NE4SL Datasheet. Specs and Replacement

Type Designator: HGS038NE4SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 1367 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: SOIC-8

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HGS038NE4SL datasheet

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HGS038NE4SL

HGS038NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 3.2 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3.9 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 20 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS SOIC-8 Hard Swit... See More ⇒

Detailed specifications: HGP100N12SL, HGP130N12SL, HGP190N15SL, HGP195N15SL, HGP1K2N20ML, HGP1K2N25ML, HGP230N10A, HGP2K4N25ML, IRFZ24N, HGS046NE6A, HGS046NE6AL, HGS048N06SL, HGS054NE4SL, HGS059N08A, HGS059N08AL, HGS060N06SL, HGS063N08SL

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