All MOSFET. HGS038NE4SL Datasheet

 

HGS038NE4SL Datasheet and Replacement


   Type Designator: HGS038NE4SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1367 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: SOIC-8
 

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HGS038NE4SL Datasheet (PDF)

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HGS038NE4SL

HGS038NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level3.2RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.9RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness20 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swit

Datasheet: HGP100N12SL , HGP130N12SL , HGP190N15SL , HGP195N15SL , HGP1K2N20ML , HGP1K2N25ML , HGP230N10A , HGP2K4N25ML , AON6380 , HGS046NE6A , HGS046NE6AL , HGS048N06SL , HGS054NE4SL , HGS059N08A , HGS059N08AL , HGS060N06SL , HGS063N08SL .

History: BL23N50-A | R6012ANJ | NP40N055ELE | PDC3964X | HUF76009D3ST | IRHM7460SE

Keywords - HGS038NE4SL MOSFET datasheet

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