HGS038NE4SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGS038NE4SL
Marking Code: GS038NE4SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1367 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: SOIC-8
HGS038NE4SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGS038NE4SL Datasheet (PDF)
..1. Size:914K cn hunteck
hgs038ne4sl.pdf
hgs038ne4sl.pdf
HGS038NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level3.2RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.9RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness20 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swit
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
