All MOSFET. HGS048N06SL Datasheet

 

HGS048N06SL Datasheet and Replacement


   Type Designator: HGS048N06SL
   Marking Code: GS048N06SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 49 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: SOIC-8
 

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HGS048N06SL Datasheet (PDF)

 ..1. Size:1008K  cn hunteck
 hgs048n06sl.pdf pdf_icon

HGS048N06SL

HGS048N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level3.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness21 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swit

 9.1. Size:1147K  cn hunteck
 hgs046ne6al.pdf pdf_icon

HGS048N06SL

HGS046NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 4.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 18 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in

 9.2. Size:909K  cn hunteck
 hgs046ne6a.pdf pdf_icon

HGS048N06SL

HGS046NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability17 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin2

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History: SUP70040E

Keywords - HGS048N06SL MOSFET datasheet

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