HGS060N06SL Datasheet and Replacement
Type Designator: HGS060N06SL
Marking Code: GS060N06SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 36 nC
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 793 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: SOIC-8
HGS060N06SL substitution
HGS060N06SL Datasheet (PDF)
hgs060n06sl.pdf

HGS060N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness17 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swit
hgs063n08sl.pdf

HGS063N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level4.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability6.2RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness16.6 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Keywords - HGS060N06SL MOSFET datasheet
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History: NTP6413AN | AO4444



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