HGS060N06SL Datasheet. Specs and Replacement

Type Designator: HGS060N06SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 793 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SOIC-8

HGS060N06SL substitution

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HGS060N06SL datasheet

 ..1. Size:920K  cn hunteck
 hgs060n06sl.pdf pdf_icon

HGS060N06SL

HGS060N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 4.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 5.8 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 17 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS SOIC-8 Hard Swit... See More ⇒

 9.1. Size:906K  cn hunteck
 hgs063n08sl.pdf pdf_icon

HGS060N06SL

HGS063N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level 4.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.2 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 16.6 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching ... See More ⇒

Detailed specifications: HGP2K4N25ML, HGS038NE4SL, HGS046NE6A, HGS046NE6AL, HGS048N06SL, HGS054NE4SL, HGS059N08A, HGS059N08AL, STP65NF06, HGS063N08SL, HGS080N10AL, HGS080N10SL, HGS085N10SL, HGS085NE6AL, HGS089N08SL, HGS090N06SL, HGS090NE6A

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