All MOSFET. HGS063N08SL Datasheet

 

HGS063N08SL Datasheet and Replacement


   Type Designator: HGS063N08SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 385 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: SOIC-8
 

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HGS063N08SL Datasheet (PDF)

 ..1. Size:906K  cn hunteck
 hgs063n08sl.pdf pdf_icon

HGS063N08SL

HGS063N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level4.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability6.2RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness16.6 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching

 9.1. Size:920K  cn hunteck
 hgs060n06sl.pdf pdf_icon

HGS063N08SL

HGS060N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness17 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swit

Datasheet: HGS038NE4SL , HGS046NE6A , HGS046NE6AL , HGS048N06SL , HGS054NE4SL , HGS059N08A , HGS059N08AL , HGS060N06SL , NCEP15T14 , HGS080N10AL , HGS080N10SL , HGS085N10SL , HGS085NE6AL , HGS089N08SL , HGS090N06SL , HGS090NE6A , HGS090NE6AL .

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