All MOSFET. HGS085NE6AL Datasheet

 

HGS085NE6AL Datasheet and Replacement


   Type Designator: HGS085NE6AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 518 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SOIC-8
 

 HGS085NE6AL substitution

   - MOSFET ⓘ Cross-Reference Search

 

HGS085NE6AL Datasheet (PDF)

 ..1. Size:927K  cn hunteck
hgs085ne6al.pdf pdf_icon

HGS085NE6AL

HGS085NE6AL P-170V N-Ch Power MOSFETFeature70 VVDS High Speed Power Switching,Logic Level7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationSOIC-8 Synchronous Rectification in SMPSDrain

 7.1. Size:926K  cn hunteck
hgs085n10sl.pdf pdf_icon

HGS085NE6AL

HGS085N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level7.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching

 9.1. Size:917K  cn hunteck
hgs080n10sl.pdf pdf_icon

HGS085NE6AL

HGS080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching an

 9.2. Size:907K  cn hunteck
hgs080n10al.pdf pdf_icon

HGS085NE6AL

HGS080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14.4 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching

Datasheet: HGS054NE4SL , HGS059N08A , HGS059N08AL , HGS060N06SL , HGS063N08SL , HGS080N10AL , HGS080N10SL , HGS085N10SL , IRF1405 , HGS089N08SL , HGS090N06SL , HGS090NE6A , HGS090NE6AL , HGS092NE6AL , HGS095NE4SL , HGS098N06SL , HGS098N10A .

History: IXTT16N20D2 | ME7632-G | AP75N07GS | IXFH66N20Q | BRF15N65 | FIR14N65FG | ELM53401CA

Keywords - HGS085NE6AL MOSFET datasheet

 HGS085NE6AL cross reference
 HGS085NE6AL equivalent finder
 HGS085NE6AL lookup
 HGS085NE6AL substitution
 HGS085NE6AL replacement

 

 
Back to Top

 


 
.