HGS085NE6AL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGS085NE6AL
Marking Code: GS085NE6AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20.5 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 518 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: SOIC-8
HGS085NE6AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGS085NE6AL Datasheet (PDF)
hgs085ne6al.pdf
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HGS085NE6AL P-170V N-Ch Power MOSFETFeature70 VVDS High Speed Power Switching,Logic Level7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationSOIC-8 Synchronous Rectification in SMPSDrain
hgs085n10sl.pdf
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HGS085N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level7.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching
hgs080n10sl.pdf
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HGS080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching an
hgs080n10al.pdf
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HGS080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14.4 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching
hgs089n08sl.pdf
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HGS089N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level6.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectification in SMPS Hard Switching and
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .