HGS092NE6AL Specs and Replacement
Type Designator: HGS092NE6AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 261 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SOIC-8
HGS092NE6AL substitution
HGS092NE6AL Specs
hgs092ne6al.pdf
HGS092NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching,Logic Level 8.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 13.4 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain SOIC-8 Application Synchronous Rectification i... See More ⇒
hgs098n10sl.pdf
HGS098N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching,Logic level 8.7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 13 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching a... See More ⇒
Detailed specifications: HGS080N10AL , HGS080N10SL , HGS085N10SL , HGS085NE6AL , HGS089N08SL , HGS090N06SL , HGS090NE6A , HGS090NE6AL , K2611 , HGS095NE4SL , HGS098N06SL , HGS098N10A , HGS098N10AL , HGS098N10SL , HGS110N08A , HGS110N08AL , HGS120N06SL .
Keywords - HGS092NE6AL MOSFET specs
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