Справочник MOSFET. HGS092NE6AL

 

HGS092NE6AL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HGS092NE6AL
   Маркировка: GS092NE6AL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17.5 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 261 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: SOIC-8

 Аналог (замена) для HGS092NE6AL

 

 

HGS092NE6AL Datasheet (PDF)

 ..1. Size:951K  cn hunteck
 hgs092ne6al.pdf

HGS092NE6AL HGS092NE6AL

HGS092NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching,Logic Level8.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainSOIC-8Application Synchronous Rectification i

 9.1. Size:912K  cn hunteck
 hgs098n10a.pdf

HGS092NE6AL HGS092NE6AL

HGS098N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching 8.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainSOIC-8Pin2 Hard Switching and High Speed Circuit2

 9.2. Size:817K  cn hunteck
 hgs090n06sl.pdf

HGS092NE6AL HGS092NE6AL

HGS090N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching,Logic level 7.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10.2RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainSOIC-8Pin2

 9.3. Size:915K  cn hunteck
 hgs098n10sl.pdf

HGS092NE6AL HGS092NE6AL

HGS098N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 8.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching a

 9.4. Size:901K  cn hunteck
 hgs095ne4sl.pdf

HGS092NE6AL HGS092NE6AL

HGS095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13.5 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swi

 9.5. Size:936K  cn hunteck
 hgs098n06sl.pdf

HGS092NE6AL HGS092NE6AL

HGS098N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level8.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12.8 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard S

 9.6. Size:907K  cn hunteck
 hgs098n10al.pdf

HGS092NE6AL HGS092NE6AL

HGS098N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 8.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12.9 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching

 9.7. Size:919K  cn hunteck
 hgs090ne6al.pdf

HGS092NE6AL HGS092NE6AL

HGS090NE6AL P-168V N-Ch Power MOSFETFeature68 VVDS High Speed Power Switching,Logic Level7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10.2RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

 9.8. Size:906K  cn hunteck
 hgs090ne6a.pdf

HGS092NE6AL HGS092NE6AL

HGS090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness14 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8

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