HGS098N10A Datasheet. Specs and Replacement

Type Designator: HGS098N10A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 262 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: SOIC-8

HGS098N10A substitution

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HGS098N10A datasheet

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HGS098N10A

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HGS098N10A

HGS098N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching,Logic level 8.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 12.9 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching... See More ⇒

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HGS098N10A

HGS098N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching,Logic level 8.7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 13 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching a... See More ⇒

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HGS098N10A

HGS098N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 8.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.4 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 12.8 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS SOIC-8 Hard S... See More ⇒

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Detailed specifications: HGS085NE6AL, HGS089N08SL, HGS090N06SL, HGS090NE6A, HGS090NE6AL, HGS092NE6AL, HGS095NE4SL, HGS098N06SL, MMIS60R580P, HGS098N10AL, HGS098N10SL, HGS110N08A, HGS110N08AL, HGS120N06SL, HGS120N10AL, HGS120N10SL, HGS130N12SL

Keywords - HGS098N10A MOSFET specs

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