HGS210N12SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGS210N12SL
Marking Code: GS210N12SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.5 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 143 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOIC-8
HGS210N12SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGS210N12SL Datasheet (PDF)
hgs210n12sl.pdf
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HGS210N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level20.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability25.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness8 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS
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