HGS210N12SL Datasheet. Specs and Replacement

Type Designator: HGS210N12SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 143 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOIC-8

HGS210N12SL substitution

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HGS210N12SL datasheet

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HGS210N12SL

HGS210N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 20.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 25.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 8 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS ... See More ⇒

Detailed specifications: HGS110N08A, HGS110N08AL, HGS120N06SL, HGS120N10AL, HGS120N10SL, HGS130N12SL, HGS170N10AL, HGS195N15SL, 20N60, HGS220N10SL, HGS230N10AL, HGS290N10SL, HGS380N12S, HGS480N15M, HGS650N15S, HGS650N15SL, HGS750N15M

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