All MOSFET. HGS290N10SL Datasheet

 

HGS290N10SL Datasheet and Replacement


   Type Designator: HGS290N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SOIC-8
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HGS290N10SL Datasheet (PDF)

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HGS290N10SL

HGS290N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level22RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability26RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness7.4 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching a

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History: WMM11N80M3 | AM2314NE | FDMS9620S | IRFI7536G | RFP2N10L

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