All MOSFET. HGS290N10SL Datasheet

 

HGS290N10SL Datasheet and Replacement


   Type Designator: HGS290N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SOIC-8
 

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HGS290N10SL Datasheet (PDF)

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HGS290N10SL

HGS290N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level22RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability26RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness7.4 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching a

Datasheet: HGS120N10AL , HGS120N10SL , HGS130N12SL , HGS170N10AL , HGS195N15SL , HGS210N12SL , HGS220N10SL , HGS230N10AL , 50N06 , HGS380N12S , HGS480N15M , HGS650N15S , HGS650N15SL , HGS750N15M , HGS750N15ML , HGT007NE6A , HGT009N08A .

History: BUK9MJJ-55PSS | SUP50N03-5M1P | F3055L-TO252 | OSG65R220FZF | 2SK1623 | SVS65R380FD4 | 2SK1118

Keywords - HGS290N10SL MOSFET datasheet

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