HGS290N10SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGS290N10SL
Marking Code: GS290N10SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 7.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.5 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 62 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: SOIC-8
HGS290N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGS290N10SL Datasheet (PDF)
hgs290n10sl.pdf
HGS290N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level22RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability26RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness7.4 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching a
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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