HGS380N12S Datasheet. Specs and Replacement

Type Designator: HGS380N12S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 77 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: SOIC-8

HGS380N12S substitution

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HGS380N12S datasheet

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HGS380N12S

HGS380N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 34.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 6 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS SOIC-8 Hard Switching and High Spe... See More ⇒

Detailed specifications: HGS120N10SL, HGS130N12SL, HGS170N10AL, HGS195N15SL, HGS210N12SL, HGS220N10SL, HGS230N10AL, HGS290N10SL, IRFP460, HGS480N15M, HGS650N15S, HGS650N15SL, HGS750N15M, HGS750N15ML, HGT007NE6A, HGT009N08A, HGT015N10S

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