HGS380N12S Datasheet and Replacement
Type Designator: HGS380N12S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 77 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: SOIC-8
HGS380N12S substitution
HGS380N12S Datasheet (PDF)
hgs380n12s.pdf
HGS380N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level34.0RDS(on),typ mW Enhanced Body diode dv/dt capability6 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Switching and High Spe
Datasheet: HGS120N10SL , HGS130N12SL , HGS170N10AL , HGS195N15SL , HGS210N12SL , HGS220N10SL , HGS230N10AL , HGS290N10SL , IRFP460 , HGS480N15M , HGS650N15S , HGS650N15SL , HGS750N15M , HGS750N15ML , HGT007NE6A , HGT009N08A , HGT015N10S .
History: SSP3N70 | HGS210N12SL | IRHM9130 | CEM9435
Keywords - HGS380N12S MOSFET datasheet
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History: SSP3N70 | HGS210N12SL | IRHM9130 | CEM9435
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