All MOSFET. HGS380N12S Datasheet

 

HGS380N12S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGS380N12S
   Marking Code: GS380N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.8 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOIC-8

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HGS380N12S Datasheet (PDF)

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 hgs380n12s.pdf

HGS380N12S HGS380N12S

HGS380N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level34.0RDS(on),typ mW Enhanced Body diode dv/dt capability6 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Switching and High Spe

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