HGS480N15M Datasheet. Specs and Replacement

Type Designator: HGS480N15M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: SOIC-8

HGS480N15M substitution

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HGS480N15M datasheet

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HGS480N15M

HGS480N15M P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching 44 RDS(on),typ mW Enhanced Body diode dv/dt capability 5.7 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit SOIC-8 Power Tools Gate ... See More ⇒

Detailed specifications: HGS130N12SL, HGS170N10AL, HGS195N15SL, HGS210N12SL, HGS220N10SL, HGS230N10AL, HGS290N10SL, HGS380N12S, IRFZ44, HGS650N15S, HGS650N15SL, HGS750N15M, HGS750N15ML, HGT007NE6A, HGT009N08A, HGT015N10S, HGT016NE6A

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