All MOSFET. HGS480N15M Datasheet

 

HGS480N15M Datasheet and Replacement


   Type Designator: HGS480N15M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SOIC-8
 

 HGS480N15M substitution

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HGS480N15M Datasheet (PDF)

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HGS480N15M

HGS480N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching44RDS(on),typ mW Enhanced Body diode dv/dt capability5.7 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8 Power ToolsGate

Datasheet: HGS130N12SL , HGS170N10AL , HGS195N15SL , HGS210N12SL , HGS220N10SL , HGS230N10AL , HGS290N10SL , HGS380N12S , IRF640 , HGS650N15S , HGS650N15SL , HGS750N15M , HGS750N15ML , HGT007NE6A , HGT009N08A , HGT015N10S , HGT016NE6A .

History: STRH100N10 | STS10P3LLH6

Keywords - HGS480N15M MOSFET datasheet

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