HGS480N15M MOSFET. Datasheet pdf. Equivalent
Type Designator: HGS480N15M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 57 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: SOIC-8
HGS480N15M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGS480N15M Datasheet (PDF)
..1. Size:906K cn hunteck
hgs480n15m.pdf
hgs480n15m.pdf
HGS480N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching44RDS(on),typ mW Enhanced Body diode dv/dt capability5.7 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8 Power ToolsGate
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